| PART |
Description |
Maker |
| UPD4416004 UPD4416004G5-A17-9JF UPD4416004G5-A15-9 |
16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
|
NEC Corp.
NEC[NEC]
|
| UPD444016G5-10-7JF UPD444016G5-12-7JF UPD444016G5- |
CONNECTOR ACCESSORY 连接器附
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| UPD444016LG5-A10Y-7JF UPD444016LG5-A12Y-7JF UPD444 |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp.
NEC[NEC]
|
| UPD431008LLE-A17 UPD431008LLE-A20 |
x8 SRAM
1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT 1m-bit互补128k-word8位快速静态存储器
|
NEC TOKIN, Corp.
|
| UPD434016AG5 UPD434016AG5-12-7JF UPD434016AG5-15-7 |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
|
NEC[NEC]
|
| M5M5W817KT-70HI |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC
|
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| CXK581000ATM/AYM/AM/AP-10LL CXK581000ATM/AYM/AM/AP |
128K X 8 STANDARD SRAM, 100 ns, PDIP32
128K X 8 STANDARD SRAM, 55 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
131072-word x 8-bit High Speed CMOS Static RAM
131072-word x 8-bit High Speed CMOS Static RAM
|
Cypress Semiconductor, Corp.
SONY
|
| MR27V12850L |
8M.Word × 16.Bit or 16M.Word × 8.Bit Page mode P2ROM
|
List of Unclassifed Manufacturers
|
